DEFECTS AT SURFACES AND INTERFACES: A SCATTERING THEORETICAL APPROACHPOLLMANN J.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 34; NO 7; PP. 587-590; BIBL. 16 REF.Article

EXCITON GROUND-STATE IN STRONGLY ANISOTROPIC CRYSTALS.POLLMANN J.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 361-364; BIBL. 10 REF.Article

NEW HEXAGONAL RING MODEL FOR THE RECONSTRUCTION OF THE SI(III)-7 X 7 SURFACEPOLLMANN J.1982; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1982; VOL. 49; NO 22; PP. 1649-1653; BIBL. 13 REF.Article

LOCALIZATION OF ELECTRONIC STATES AT FREE SEMICONDUCTOR SURFACESPOLLMANN J; PANTELIDES ST.1979; PHYS. REV., B; USA; DA. 1979; VOL. 20; NO 4; PP. 1740-1742; BIBL. 5 REF.Article

EFFECTIVE HAMILTONIANS AND BINDING ENERGIES OF WANNIER EXCITONS IN POLAR SEMICONDUCTORS.POLLMANN J; BUETTNER H.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 10; PP. 4480-4490; BIBL. 26 REF.Article

MICROSCOPIC APPROACH TO THE QUANTUM SIZE EFFECT IN SUPERLATTICESTVANOV I; POLLMANN J.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 10; PP. 869-872; BIBL. 15 REF.Article

ELASTISCHES VERSCHIEBUNGSFELD UND WECHSELWIRKUNGSENERGIE VON PUNKTDEFEKTEN IN ANISOTROPEN, KUBISCHEN KRISTALLEN = CHAMP DE DEPLACEMENT ELASTIQUE ET ENERGIE D'INTERACTION DE DEFAUTS PONCTUELS DANS DES CRISTAUX CUBIQUES ANISOTROPESDEDERICHS PH; POLLMANN J.1972; JUEL-836-FF; DTSCH.; DA. 1972; PP. 1-47; H.T. 22; BIBL. 1 P.Report

NEW EVIDENCE FOR ASYMMETRIC DIMER RECONSTRUCTION ON THE SI(100)-(2 X 1) SURFACEMAZUR A; POLLMANN J.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 12; PP. 7086-7089; BIBL. 27 REF.Article

SCATTERING-THEORETIC APPROACH TO THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES: THE (100) SURFACE OF TETRAHEDRAL SEMICONDUCTORS AND SIO₂POLLMANN J; PANTELIDES ST.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 10; PP. 5524-5544; BIBL. 76 REF.Article

UPPER BOUNDS FOR THE GROUND-STATE ENERGY OF THE EXCITON-PHONON SYSTEM.POLLMANN J; BUTTNER H.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 9; PP. 1171-1174; BIBL. 15 REF.Article

BINDING ENERGIES AND WAVE FUNCTIONS OF WANNIER EXCITONS IN UNIAXIAL CRYSTALS. A MODIFIED PERTURBATION APPROACH. II. APPLICATIONS.GERLACH B; POLLMANN J.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 67; NO 2; PP. 477-485; ABS. ALLEM.; BIBL. 10 REF.Article

ELECTRONIC STRUCTURE OF IDEAL AND RELAXED SURFACES OF ZNO: A PROTOTYPE IONIC WURTZITE SEMICONDUCTOR AND ITS SURFACE PROPERTIESIVANOV I; POLLMANN J.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 12; PP. 7275-7296; BIBL. DISSEM.Article

NEW METHOD FOR THE ELECTRONIC STRUCTURE OF HETEROJUNCTIONS: APPLICATION TO THE (100)GE-GAAS INTERFACESPOLLMANN J; PANTELIDES ST.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 30; NO 10; PP. 621-625; BIBL. 20 REF.Article

GROUND-STATE ENERGY OF THE EXCITON-PHONON SYSTEM IN A MAGNETIC FIELD.BEHNKE G; BUTTNER H; POLLMANN J et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 9; PP. 873-876; BIBL. 15 REF.Article

OVERLAYER SYSTEMS: SUITABLE SAMPLES FOR PROBING HETEROJUNCTION INTERFACE PROPERTIESMAZUR A; POLLMANN J; SCHMEITS M et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 11; PP. 961-964; BIBL. 13 REF.Article

QUENCHING OF EXCITON DIAMAGNETIC SHIFTS IN POLAR, LAYERED MATERIALSPOLLMANN J; LIPARI NO; BUTTNER H et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 28; NO 2; PP. 203-206; BIBL. 13 REF.Article

ELECTRONIC STRUCTURE OF IDEAL AND RELAXED INSB (110) SURFACESSCHMEITS M; MAZUR A; POLLMANN J et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 12; PP. 1081-1084; BIBL. 13 REF.Article

THE IDEAL(111), (110) AND (100) SURFACES OF SI, GE AND GAAS; A COMPARISON OF THEIR ELECTRONIC STRUCTUREIVANOV I; MAZUR A; POLLMANN J et al.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 92; NO 2-3; PP. 365-384; BIBL. 46 REF.Article

ANGULAR-RESOLVED INITIAL STATE SPECTRA FOR THE RELAXED GAAS (110) SURFACEMAZUR A; POLLMANN J; SCHMEITS M et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 42; NO 1; PP. 37-41; BIBL. 12 REF.Article

First-principles theory of sulfur adsorption on semi-infinite Ge(001)KRUGER, P; POLLMANN, J.Physical review letters. 1990, Vol 64, Num 15, pp 1808-1811, issn 0031-9007Article

Unitized radial shaft seals for engine applicationsPOLLMANN, J; SEIDL, J. H.SAE transactions. 1990, Vol 99, Num 2, pp 813-821, issn 0096-736XArticle

Bond-angle relaxation and electronic structure of Si and Ge overlayers on (110) surfaces of III-V semiconductorsKALLA, R; POLLMANN, J.Surface science. 1988, Vol 200, Num 1, pp 80-100, issn 0039-6028Article

Mean-square displacements at the reconstructed Si(001)-(2 × 1) surfaceMAZUR, A; POLLMANN, J.Vacuum. 1990, Vol 41, Num 1-3, pp 600-601, issn 0042-207X, 2 p.Conference Paper

Self-consistent surface electronic structure for semi-infinite semiconductors from scattering theoryKRUÊGER, P; POLLMANN, J.Physica. B, Condensed matter. 1991, Vol 172, Num 1-2, pp 155-166, issn 0921-4526, 12 p.Conference Paper

Scattering-theoretical method for semiconductor surfaces: self-conssistent formulation and application to Si(001)-(2×1)KRÜGER, P; POLLMANN, J.Physical review. B, Condensed matter. 1988, Vol 38, Num 15, pp 10578-10599, issn 0163-1829Article